Silicon core wire for depositing polycrystalline silicon and production method therefor
US12275642B2 · kind B2 · utility
0Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2020 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Feb 20, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A silicon core wire for depositing polycrystalline silicon is formed in a gate shape and includes a pair of vertical rod portions and a horizontal portion laterally connecting upper ends of the vertical rod portions, in which ends of the vertical rod portions and the horizontal portion are joined by welding, and a corner junction has a surface metallic concentration of 1 ppbw or less, more specifically, with an iron concentration of 0.2 ppbw or less, a chromium concentration of 0.1 ppbw or less, a nickel concentration of 0.05 ppbw or less, and a titanium concentration of 0.2 ppbw or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.