Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same
US12276026B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Aug 25, 2023 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Aug 25, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.