Plasma treatment device
US12278092B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2019 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Mar 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention realizes a plasma treatment device with which a film deposition rate and film thickness of a film formed on a substrate can be made uniform. A plasma treatment device includes: a plurality of antennas for plasma generation arranged in a vacuum chamber; and a plurality of groups of multiple gas injection ports arranged in the vicinity of lines that are substantially perpendicular to longitudinal directions of the plurality of antennas and extend in a direction in which the plurality of antennas are arranged with respect to each other. The plasma treatment device further includes a gas flow-rate control unit for controlling flow rates of gas injected from each of the groups of the multiple gas injection ports.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.