Plasma etching method using pentafluoropropanol
US12278093B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Sep 17, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.