Preparation method of semiconductor device
US12278106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2021 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Feb 15, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a preparation method of a semiconductor device, including the following steps: providing a substrate and forming a mask layer with a plurality of first windows on the substrate; forming a dielectric layer, the dielectric layer at least covering sidewalls of the first windows; forming a first photoresist material layer, the first photoresist material layer covering the dielectric layer and the mask layer and filling the first windows; patterning the first photoresist material layer to form a patterned first photoresist layer which exposes a top surface of the dielectric layer; by using the first photoresist layer and the mask layer as masks, removing the dielectric layer to form second windows; and removing part of the substrate along the second windows to form a patterned substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.