Plasma etching method
US12278111B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jun 1, 2020 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Jan 3, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.