High electron mobility transistor
US12278281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2021 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Nov 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A high electron mobility transistor (HEMT) includes an active region, in which a channel is formed, and a field region surrounding the active region. The HEMT may include a channel layer; a barrier layer on the channel layer and configured to induce a two-dimensional electron gas (2DEG) in the channel layer; a source and a drain on the barrier layer in the active region; and a gate on the barrier layer. The gate may protrude from the active region to the field region on the barrier layer. The gate may include a first gate and a second gate. The first gate may be in the active region and the second gate may be in the boundary region between the active region and the field region. A work function of the second gate may be different from a work function of the first gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.