High modulation speed PIN-type photodiode

US12278304B2 · kind B2 · utility

Assignee

• MELLANOX TECHNOLOGIES, LTD. · IL

Inventors

• Yuri Berk · Kiryat Tivon, IL
• Vladimir Iakovlev · Yoqneam Illit, IL
• Tamir Sharkaz · Kfar Tavor, IL
• Elad Mentovich · Tel Aviv-Yafo, IL
• Matan Galanty · Korazim, IL
• Itshak Kalifa · Ramat Gan, IL
• Paraskevas Bakopoulos · Municipality of Aigaleo, GR

Key dates

• Filing date: Feb 22, 2021
• Grant date: Apr 15, 2025
• Expiry date: Sep 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1248

Abstract

Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.