Edge emitting laser device
US12278464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Dec 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/343
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge emitting laser (EEL) device includes a substrate, an n-type buffer layer, a first n-type cladding layer, a grating layer, a spacer layer, a lower confinement unit, an active layer, an upper confinement unit, a p-type cladding layer, a tunnel junction layer and a second n-type cladding layer sequentially arranged from bottom to top. The tunnel junction layer can stop an etching process from continuing to form the second n-type cladding layer into a predetermined ridge structure and converting a part of the p-type cladding layer into the n-type cladding layer to reduce series resistance of the EEL device. Therefore, the optical field and active layer tend to be coupled at the middle of the active layer, the lower half of the active layer can be utilized effectively, and the optical field is near to the grating layer to achieve better optical field/grating coupling efficiency and lower threshold current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.