Method of fabricating semiconductor memory device having protruding contact portion
US12279415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2023 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Jun 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.