Semiconductor device
US12279433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Jul 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a cell region and a peripheral circuit region. The cell region includes gate electrode layers stacked on a substrate, channel structures extending in a first direction, extending through the gate electrode layers, and connected to the substrate, and bit lines extending in a second direction and connected to the channel structures above the gate electrode layers. The peripheral circuit region includes page buffers connected to the bit lines. Each page buffer includes a first and second elements adjacent to each other in the second direction and sharing a common active region between a first gate structure of the first element and a second gate structure of the second element in the second direction. Boundaries of the common active region include an oblique boundary extending in an oblique direction forming an angle between 0 and 90 degrees with the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.