Patterning electronic devices using reactive-ion etching of tin oxides
US12279450B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 9, 2020 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Feb 14, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3293
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Patterning electronic devices using reactive-ion etching of tin oxides is provided. Reactive-ion etching facilitates patterning of tin oxides, such as barium stannate (BaSnO3), at a consistent and controllable etch rate. The reactive-ion etching approach described herein facilitates photolithographic patterning of tin oxide-based semiconductors to produce electronic devices, such as thin-film transistors (TFTs). This approach further patterns a tin oxide-based semiconductor without adversely affecting its electrical properties (e.g., resistivity, electron or hole mobility), as well as maintaining surface roughness. This approach can be used to produce optically transparent devices with high drain current (ID, drain-to-source current per channel width) and high on-off ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.