Colloidal quantum dot photodetectors having thin encapsulation layers thereon and methods of fabricating the same
US12279469B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 19, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Oct 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K30/88
Abstract
Colloidal quantum dot devices are provided including an integrated circuit; a colloidal quantum dot structure on the integrated circuit; and an encapsulation layer on the colloidal quantum dot structure, the encapsulation layer having a thickness from about 0.5 nm to about 500 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.