Low temperature co-fired dielectric material and preparation method thereof

US12281047B2 · kind B2 · utility

Assignee

• GUANGDONG FENGHUA ADVANCED TECHNOLOGY HOLDING CO., LTD. · CN

Inventors

• Shiwo Ta · Tangxia, CN
• Xiaozhou Wang · Yamato, JP
• Tao Chen · Jersey City, US
• Yun Liu · Zhuolan Township, TW
• Terry James Frankcombe · Tharwa, AU
• Zhenxiao Fu · Tangxia, CN
• Xiuhua Cao · Longbeilingcun, CN
• Chunyuan Hu · Longbeilingcun, CN

Key dates

• Filing date: May 3, 2021
• Grant date: Apr 22, 2025
• Expiry date: Dec 13, 2043

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2235/72
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Disclosed is a low temperature co-fired dielectric material with an adjustable dielectric constant, wherein it comprises a zirconia main phase and a silicon-based amorphous filler, a weight ratio of the zirconia main phase to the silicon-based amorphous filler is 40-65:35-60; a weight percentage of SiO2 in the silicon-based amorphous filler is ≥50%. The dielectric constant of low temperature co-fired dielectric material can be continuously adjusted in a wide range of 7-12, the dielectric loss can be as low as 0.1% at 1 MHz. The material system can be sintered at 800-900° C. and co-fired with silver electrode. It can be used as the low temperature co-fired dielectric material. The invention also discloses a method for preparing the low temperature co-fired dielectric material with an adjustable dielectric constant.