Preparation method of niobium diselenide film with ultra-low friction and low electrical noise under sliding electrical contact in vacuum
US12281379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Apr 18, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/505
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a preparation method of a niobium diselenide (NbSe2) film with ultra-low friction and low electrical noise under sliding electrical contact in vacuum. The method uses a direct current (DC) closed field magnetron sputtering method for preparation. Through process design of low deposition pressure and low sputtering energy, on one hand, a purity of an NbSe2 sputtered product is kept, generation of interference phases such as NbSe3 is avoided, and electrical conductivity of the sputtered NbSe2 film is greatly improved, and on the other hand, a nanocrystalline/amorphous superlattice composite structure is formed, and excellent mechanical and lubricating properties are achieved. Under sliding electrical contact in vacuum, compared with those of a common electroplated gold coating, a friction coefficient of the film is reduced to 0.02 from 0.25, a wear life is prolonged by at least 7 times, and the electrical noise is reduced by about 50%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.