Patent · US Active

Device for producing silicon carbide single crystals

US12281407B2 · kind B2 · utility

0Cited by

6References

12Claims

0Family size

Assignee

EBNER Industrieofenbau GmbH · AT

Inventors

Robert Ebner · Leonding, AT
Kanaparin Ariyawong · Leonding, AT
Ghassan Barbar · Neunkirchen, DE
Chih-Yung Hsiung · Leonding, AT

Key dates

Filing date	Sep 23, 2021
Grant date	Apr 22, 2025
Priority date	—
Expiry date	Jun 26, 2042

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/36
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A device for producing single crystals of silicon carbide has a furnace and a chamber with a crucible and a seed crystal, the chamber being accommodated in the furnace, wherein a base material containing silicon carbide is arranged in the crucible, wherein the base material contains a mixture of silicon carbide powder and silicon carbide lumps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.