Method for fabricating a photonic chip
US12282192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Oct 18, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12197
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.