Patent · US Active

Non-radioactive plasma ion source device

US12283473B1 · kind B1 · utility

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20Claims
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Assignee

Inventors

Key dates

Filing dateApr 10, 2024
Grant dateApr 22, 2025
Priority date
Expiry dateApr 10, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05H1/2406
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Described is a non-radioactive homogenous plasma ion source that is power efficient. The non-radioactive plasma ion source comprises an ion source, an ion source housing for retaining the ion source, a gas inlet chamber having a gas conduit connectable to a gas source, at least one planar electrode for forming an electric field, a mounting head for mounting the non-radioactive plasma ion source device to an external device, and a passageway extending across a longitudinal axis of the non-radioactive plasma ion source device for allowing gas to flow therethrough. The gas inlet chamber has an improved design in that the gas inlet chamber comprises one or more openings in a body of the gas inlet chamber, the one or more openings being spaced such that the gas from the gas source is injected uniformly into the passageway.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.