Copper wire bond on gold bump on semiconductor die bond pad
US12283559B2 · kind B2 · utility
0Cited by
9References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Nov 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.