Method for manufacturing semiconductor device
US12283620B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 11, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Sep 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes: preparing a semiconductor substrate; arranging a mask on one surface of the semiconductor substrate; forming opening portions in the mask by patterning so as to expose planned formation regions of the semiconductor substrate where trenches are to be formed; forming the trenches, which extend in a longitudinal direction along a planar direction of the semiconductor substrate, in the semiconductor substrate adjacent to the one surface, by performing a first etching using the mask; forming a rounded portion at an opening end portion of each of the trenches by performing a second etching in a state where the mask is arranged and under a condition that a selectivity of the mask is higher than that of the semiconductor substrate; and arranging a gate insulating film and a gate electrode in each of the trenches, thereby to form trench gate structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.