Semiconductor laser chip and preparation method therefor
US12283791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2019 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | May 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser chip and a preparation method therefor, the method comprising: providing an epitaxial wafer (100), the epitaxial wafer (100) comprising a plurality of resonant cavities (110) arranged in parallel; providing a heat sink substrate (200); attaching the epitaxial wafer (100) to the heat sink substrate (200) so as to form a first chip semi-finished product (10); performing first division on the first chip semi-finished product (10) in the direction perpendicular to the resonant cavities (110) so as to divide the first chip semi-finished product (10) into a plurality of second chip semi-finished products (20); and performing second division on the second chip semi-finished products (20) in the direction parallel to the resonant cavities (110) so as to divide the second chip semi-finished products (20) into a plurality of semiconductor laser chips (30) such that the semiconductor laser chips (30) comprise at least one laser bar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.