Resistance device, integrated circuit device, implantable device, and correction factor determining method
US12285600B2 · kind B2 · utility
0Cited by
3References
14Claims
0Family size
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Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A resistance device (100) includes a field-effect transistor (TN) and a voltage applying circuit (1). The voltage applying circuit (1) applies a control voltage (Vgs) between the gate and source of the field-effect transistor (TN) according to a temperature (T) to control a resistance value (R) between the drain and source of the field-effect transistor (TN). The control voltage (Vgs) is a voltage obtained by adding a correction voltage (Vc) to a reference voltage (Vgs0). The correction voltage (Vc) depends on the temperature (T) and is set to be zero at a first temperature (T1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.