Method for forming and patterning color centers
US12286539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2019 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Aug 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This disclosure enables the generation and patterning of color centers with nanometer-scale spatial control in a variety of materials in repeatable fashion and without the use of radiation. Embodiments in accordance with the present disclosure employ a layer of vacancy-injection material disposed on a host-material, where the vacancy-injection material forms a compound with host-material atoms at elevated temperatures. During compound formation, lattice vacancies are generated in the host material and diffuse within the substrate lattice to bond with impurity atoms, thereby forming color centers. High-resolution lithographic patterning of the vacancy-injection film and the short diffusion lengths of the lattice vacancies enables nanometer-level spatial control over the lateral positions of the color centers. Furthermore, the depth of the color centers in the substrate can be controlled by controlling the coating material, thickness, anneal time, and anneal temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.