Rotating multi-segment thin-film pressure sensor and arrangement method
US12287250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Oct 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin-film pressure sensor and an arrangement method thereof are provided. The thin-film pressure sensor includes a flat diaphragm and a first induction unit in the shape of a thin film arranged on the flat diaphragm, where the first induction unit includes m rotating multi-segment resistance wires arranged around the center of a circle of a circular deformation area of the flat diaphragm, m/2 rotating multi-segment resistance wires on one side are connected in series to form a second induction resistor, and m/2 rotating multi-segment resistance wires on the other side are connected in series to form a fourth induction resistor, where m is a multiple of 4; the arrangement method includes arrangement for the first induction unit. The radial strain and the tangential strain of the flat diaphragm can be fully utilized, and the detection sensitivity of the thin-film pressure sensor is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.