GaN HEMT device for irradiation damage detection and detection and manufacturing method therefor
US12287360B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2024 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Dec 30, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the gallium nitride layer. A Schottky metal layer is provided on the p-type gallium nitride layer. A first ohmic metal layer and a second ohmic metal layer are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the barrier layer. The second ohmic metal layer includes inner gear electrodes and outer gear electrodes, which are interdigital with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.