Patent · US Active

Semiconductor device

US12288734B2 · kind B2 · utility

0Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 6, 2022
Grant dateApr 29, 2025
Priority date
Expiry dateFeb 26, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06586
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate including a first side and a second side opposite to each other, a first penetrating structure that penetrates the substrate, and a second penetrating structure that penetrates the substrate, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.