Patent · US Active

Integrated circuit devices

US12288788B2 · kind B2 · utility

0Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 24, 2021
Grant dateApr 29, 2025
Priority date
Expiry dateApr 16, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/8314
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit device includes substrate including a fin-type active area extending on the substrate in a first direction parallel to an upper surface of the substrate, a first gate line crossing the fin-type active area on the substrate and extending in a second direction perpendicular to the first direction, a cut gate line extending in the second direction and being spaced apart from the first gate line with a first gate cut area therebetween, a second gate line extending in the second direction and being spaced apart from the cut gate line with a second gate cut area therebetween, and a power wiring disposed on the cut gate line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.