Vertical inverter and semiconductor device
US12289907B2 · kind B2 · utility
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1References
16Claims
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Assignee
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Key dates
| Filing date | Aug 30, 2022 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Sep 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
The present disclosure provides a vertical inverter and a semiconductor device including the vertical inverter, and the vertical inverter includes an insulation substrate, a first thin film transistor, and a second thin film transistor. By a layered arrangement of the first and second thin film transistors of the vertical inverter, more thin film transistors can be arranged within the limited space, so that the integration degree of the thin film transistors in the semiconductor device can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.