Semiconductor structure
US12289915B2 · kind B2 · utility
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Key dates
| Filing date | May 14, 2024 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | May 14, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
Abstract
A semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer, the second nitride semiconductor layer forming a first recess and a second recess; and an electrode disposed on the second nitride semiconductor layer and comprising an element; wherein the electrode is disposed in the first recess and the second recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.