Three-state spintronic device, memory cell, memory array and read-write circuit
US12293781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2021 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jul 11, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.