Mn—Ta—W—Cu—O-based sputtering target, and production method therefor
US12293906B2 · kind B2 · utility
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Key dates
| Filing date | Sep 9, 2019 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Sep 29, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/2432
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a Mn—Ta—W—Cu—O-based sputtering target including, in the component composition, Mn, Ta, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of Mn4Ta2O9. Also provided is a production method for the sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.