Semiconductor device and method of manufacturing the same
US12293925B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2022 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jan 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a mask, the plurality of first wirings and the plurality of first dummy wirings close thereto are densely formed, and the second dummy wiring is formed so as to surround a periphery of the second wiring sparsely formed directly above an analog circuit portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.