Patent · US Active

Semiconductor chip and method for manufacturing the same

US12293945B2 · kind B2 · utility

0Cited by
3References
9Claims
0Family size

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Key dates

Filing dateMar 30, 2022
Grant dateMay 6, 2025
Priority date
Expiry dateApr 30, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/6834
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.