Patent · US Active

Power semiconductor module

US12293973B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 10, 2022
Grant dateMay 6, 2025
Priority date
Expiry dateNov 30, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power semiconductor module includes a plurality of semiconductor switches arranged in a plurality of groups. Each semiconductor switch has a first terminal and a second terminal having a controlled path therebetween and a control terminal. A plurality of first group contacts are each connected to the first terminals of the semiconductor switches of a respective group and a plurality of second group contacts are each connected to the second terminals of the semiconductor switches of the respective group. A plurality of control group contacts are each connected to the control terminals of the semiconductor switches of the respective group. An interconnection bridge connects the control group contacts and the first group contacts of the plurality of groups. The interconnection bridge has a layer structure with a first conductive layer and a second conductive layer being separated by an insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.