Method for manufacturing metal gate of PMOS
US12295153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2022 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a method for manufacturing a metal gate of a PMOS, comprising: step 1, forming a P-type work function metal layer; step 2, depositing an N-type work function metal layer by means of a PVD process, wherein over a bottom surface of a gate trench, the N-type work function metal layer has a hill profile; step 3, forming a first top barrier metal sublayer by means of a conformal growth process, wherein the first top barrier metal sublayer completely fills a sharp corner area of the N-type work function metal layer at a corner of the gate trench; step 4, growing a second top barrier metal sublayer by means of a PVD bombardment process; step 5, forming a third top barrier metal sublayer and a fourth top barrier metal sublayer; and step 6, forming a metal conductive material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.