P-type gallium oxide film, and preparation method and application thereof
US12297527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2024 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Aug 21, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing a p-type gallium oxide film is provided. An MxGa1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MxGa1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The MxGa1-xN clusters are oxidized by O2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The MxGa1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.