Ultra-high ambipolar mobility cubic boron arsenide

US12297563B2 · kind B2 · utility

Assignee

• University of Houston System · US

Inventors

• Zhifeng Ren · Houston, US
• Jiming Bao · Pearland, US
• Shuai Yue · Mercer Island, US
• Fei Tian · Beijing, CN
• Geethal Amila Udalamatta Gamage · Fremont, US
• Gang Chen · Berkeley Heights, US
• Jungwoo Shin · Cambridge, US

Key dates

• Filing date: Jan 23, 2023
• Grant date: May 13, 2025
• Expiry date: Aug 27, 2043

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2006/80
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Herein provided are cubic boron arsenide (c-BAs) single crystals having an unexpectedly high ambipolar mobility at room temperature, μa, at one or more locations thereof that is greater than or equal to 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 3000, 4000, 5000, 6000, 7000, 8000, 9000, or 10000 cm2V−1s−1, wherein the ambipolar mobility is defined as: μa=2μeμh/(μe+μh), wherein μe is electron mobility and μh is hole mobility, and having a room temperature thermal conductivity at the one or more locations thereof that is greater than or equal to 1000 Wm−1K−1. Methods of making and using the c-BAs single crystals are also provided.