Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US12298301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2023 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Nov 15, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4146
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus may include a sensor chip fabricated on a semiconductor wafer, the sensor chip may include a graphene channel patterned in a graphene layer disposed on a dielectric substrate. The sensor chip may include a first electrode formed in electrode material so as to form one or more of an edge side contact or a top side contact in electrical contact with a first end of the graphene channel. The sensor chip may include a second electrode formed in electrode material so as to form one or more of an edge side contact or a top-side contact in electrical contact with a second end of the graphene channel. The sensor chip may include an insulation layer that is layered above at least of portion of the graphene layer and is selected from an inorganic oxide layer and an organic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.