Methods for tunnel magnetoresistance multi-turn sensor manufacture and read-out
US12298365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Jun 14, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R15/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. One or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars can be configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.