Method of manufacturing semiconductor devices
US12300506B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Mar 15, 2024 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Mar 15, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.