Semiconductor device with multilayer insulating layer in recess and method of manufacturing the same
US12300614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2021 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Mar 14, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.