Semiconductor device having functional patterns in redundant regions of double seal ring
US12300635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Feb 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first circuit region; a first inner seal ring at least partially surrounding the first circuit region; and an outer seal ring at least partially surrounding the first inner seal ring. The outer seal ring includes a first corner and a substantially triangular corner seal ring (CSR) structure at the first corner. The first inner seal ring includes a second corner adjacent to and spaced away from the CSR structure. The semiconductor structure further includes a first region between a first side of the first corner and a first side of the second corner that is parallel to the first side of the first corner, and multiple functional patterns in the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.