GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof
US12300746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2024 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Apr 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
The present invention discloses a GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof. The transistor includes a substrate layer, a gallium nitride layer, a barrier layer, and a gate structure successively arranged from bottom to top. The gallium nitride layers on both sides of the barrier layer are respectively provided with a source electrode and a drain electrode on the top surface. The gate structure is located near the source electrode and includes a p-type gallium nitride layer, a dielectric layer, an Ohmic metal pillar, and a Schottky metal layer. The present invention solves the breakdown problem caused by the inability to release impact energy during the switching process by introducing an asymmetric multi-integrated gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.