Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer
US12301213B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Sep 16, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Aug 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer. At least a portion of the back electrode is exposed in the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.