Patent · US Active

Semiconductor device

US12301235B2 · kind B2 · utility

0Cited by
0References
18Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 6, 2023
Grant dateMay 13, 2025
Priority date
Expiry dateSep 4, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K3/012
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

The semiconductor device includes: a first power module having a first reference potential terminal and a first control signal input terminal; a second power module, connected in parallel to the first power module, having a second reference potential terminal and a second control signal input terminal; a first capacitor connected between the first control signal input terminal and the first reference potential terminal; and a first filter connected in series to the first capacitor, on an inter-control terminal path extending from the first control signal input terminal through the first capacitor to the second control signal input terminal. The first filter has a frequency characteristic that an impedance thereof increases as a frequency increases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.