Integrated circuit device and electronic system including the same
US12302576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Mar 13, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes: a semiconductor substrate having a cell region and a dummy region outside the cell region, a plurality of gate electrodes and a plurality of insulating layers, in the cell region, extending in first and second directions parallel to a main surface of the semiconductor substrate and alternately stacked in a third direction perpendicular to the main surface of the semiconductor substrate, the first and second directions crossing each other, and a plurality of dummy mold layers and a plurality of dummy insulating layers alternately stacked in the dummy region in the third direction, wherein a carbon concentration of an upper dummy mold layer of the plurality of dummy mold layers is less than a carbon concentration of a lower dummy mold layer of the plurality of dummy mold layers, the lower dummy mold layer being between the upper dummy mold layer and the main surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.