Fin field-effect transistor and method of forming the same
US12302596B2 · kind B2 · utility
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8References
20Claims
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Key dates
| Filing date | Feb 26, 2024 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Feb 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.