Semiconductor device
US12302610B2 · kind B2 · utility
0Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Nov 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A height of an upper surface of a control gate electrode is lower than a highest position of a lower surface of a silicide layer on a memory gate electrode adjacent to the control gate electrode via an ONO film. As a result, a structure in contact with the ONO film between the control gate electrode and the memory gate electrode is only the control gate electrode and the memory gate electrode made of polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.