Electronic device comprising two high electron mobility transistors
US12302625B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 30, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Oct 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.