Backside illuminated single photon avalanche diode
US12302648B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 2021 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Aug 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor chip including a resistor and a backside illuminated single photon avalanche diode (SPAD) that is connected to the resistor; and a sensor including a sensor chip with a resistor and a backside illuminated SPAD that is connected to the resistor. The backside illuminated SPAD including an anode, a cathode, and a multiplication structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.